SH8K37GZETB Rohm Semiconductor
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 135+ | 89.83 грн |
| 141+ | 85.82 грн |
| 250+ | 82.38 грн |
| 500+ | 76.57 грн |
| 1000+ | 68.59 грн |
| 2500+ | 63.89 грн |
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Технічний опис SH8K37GZETB Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V, Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 100µA, Supplier Device Package: 8-SOP.
Інші пропозиції SH8K37GZETB за ціною від 45.55 грн до 117.26 грн
| Фото | Назва | Виробник | Інформація |
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SH8K37GZETB | Виробник : Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 5.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 100µA Supplier Device Package: 8-SOP |
на замовлення 2356 шт: термін постачання 21-31 дні (днів) |
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SH8K37GZETB | Виробник : ROHM Semiconductor |
MOSFET 4V Drive Nch+Nch MOSFET. SH8K37GZETB is low on-resistance and small surface mount package MOSFET. It is suitable for switching and motor drive.Buy Sample FAQ Contact Us Data Sheet PackageDimensions |
на замовлення 1954 шт: термін постачання 21-30 дні (днів) |
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SH8K37GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 5.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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SH8K37GZETB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 5.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 100µA Supplier Device Package: 8-SOP |
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SH8K37GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 5.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |