SH8JB5TB1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: -40V DUAL PCH+PCH, SOP8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: -40V DUAL PCH+PCH, SOP8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 77.11 грн |
5000+ | 71.46 грн |
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Технічний опис SH8JB5TB1 Rohm Semiconductor
Description: ROHM - SH8JB5TB1 - Dual-MOSFET, p-Kanal, 40 V, 40 V, 8.5 A, 8.5 A, 0.0124 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 8.5A, Dauer-Drainstrom Id, p-Kanal: 8.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 8.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm, productTraceability: No, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції SH8JB5TB1 за ціною від 65.15 грн до 186.87 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SH8JB5TB1 | Виробник : ROHM |
Description: ROHM - SH8JB5TB1 - Dual-MOSFET, p-Kanal, 40 V, 40 V, 8.5 A, 8.5 A, 0.0124 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8.5A Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 2874 шт: термін постачання 21-31 дні (днів) |
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SH8JB5TB1 | Виробник : Rohm Semiconductor |
Description: -40V DUAL PCH+PCH, SOP8, POWER M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 8094 шт: термін постачання 21-31 дні (днів) |
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SH8JB5TB1 | Виробник : ROHM Semiconductor | MOSFETs -40V Dual Pch+Pch, SOP8, Power MOSFET |
на замовлення 16451 шт: термін постачання 21-30 дні (днів) |
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SH8JB5TB1 | Виробник : ROHM |
Description: ROHM - SH8JB5TB1 - Dual-MOSFET, p-Kanal, 40 V, 40 V, 8.5 A, 8.5 A, 0.0124 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 2874 шт: термін постачання 21-31 дні (днів) |
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SH8JB5TB1 | Виробник : ROHM - Japan |
Transistor P-Channel MOSFET; 40V; 16V; 8,5A; 15,3mOhm; 2W; -55°C~150°C; Bubstitute: SH8JB5TB1; SH8JB5 TSH8JB5 кількість в упаковці: 2 шт |
на замовлення 10 шт: термін постачання 28-31 дні (днів) |
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SH8JB5TB1 | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -40V; -8.5A; Idm: -34A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -34A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -40V Drain current: -8.5A On-state resistance: 18.7mΩ Gate charge: 51nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |
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SH8JB5TB1 | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -40V; -8.5A; Idm: -34A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -34A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -40V Drain current: -8.5A On-state resistance: 18.7mΩ Gate charge: 51nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |