SF64G YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGYCategory: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 150A; R6; Ufmax: 950mV
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: R6
Max. forward voltage: 0.95V
Reverse recovery time: 35ns
кількість в упаковці: 5 шт
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Технічний опис SF64G YANGJIE TECHNOLOGY
Description: DIODE GEN PURP 200V 6A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 100pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції SF64G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SF64G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 6A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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SF64G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 6A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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SF64G | Виробник : Taiwan Semiconductor |
Rectifiers 6.0 Amp 200V 35ns |
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SF64G | Виробник : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 150A; R6; Ufmax: 950mV Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Kind of package: tape Max. forward impulse current: 150A Case: R6 Max. forward voltage: 0.95V Reverse recovery time: 35ns |
товар відсутній |