SF1200-TAP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 1.2KV 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 125°C (Max)
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Reverse Recovery Time (trr): 75 ns
Voltage - DC Reverse (Vr) (Max): 1200 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 15.22 грн |
| 10000+ | 13.57 грн |
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Технічний опис SF1200-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 1A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-57, Operating Temperature - Junction: 125°C (Max), Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V, Reverse Recovery Time (trr): 75 ns, Voltage - DC Reverse (Vr) (Max): 1200 V.
Інші пропозиції SF1200-TAP за ціною від 13.66 грн до 48.78 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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SF1200-TAP | Виробник : Vishay Semiconductors |
Rectifiers 1.0 Amp 1200 Volt 30 Amp IFSM |
на замовлення 16074 шт: термін постачання 21-30 дні (днів) |
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SF1200-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 3.4V Leakage current: 50µA Reverse recovery time: 75ns |
на замовлення 4874 шт: термін постачання 21-30 дні (днів) |
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SF1200-TAP | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 1A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: 125°C (Max) Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Reverse Recovery Time (trr): 75 ns Voltage - DC Reverse (Vr) (Max): 1200 V |
на замовлення 6048 шт: термін постачання 21-31 дні (днів) |
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SF1200-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 3.4V Leakage current: 50µA Reverse recovery time: 75ns кількість в упаковці: 1 шт |
на замовлення 4874 шт: термін постачання 14-21 дні (днів) |
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SF1200-TAP | Виробник : Vishay |
Rectifier Diode Switching 1.2KV 1A 75ns 2-Pin SOD-57 Ammo |
товар відсутній |