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SEMIX453GB17E4I50P 27897030 SEMIKRON DANFOSS


SEMIX453GB17E4I50P.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.7kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Pulsed collector current: 1.35kA
Collector current: 450A
Gate-emitter voltage: ±20V
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Topology: IGBT half-bridge; shunt resistor; thermistor
Case: SEMiX® 3p
кількість в упаковці: 1 шт
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Технічний опис SEMIX453GB17E4I50P 27897030 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.7kV, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Pulsed collector current: 1.35kA, Collector current: 450A, Gate-emitter voltage: ±20V, Type of module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.7kV, Topology: IGBT half-bridge; shunt resistor; thermistor, Case: SEMiX® 3p, кількість в упаковці: 1 шт.

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SEMIX453GB17E4I50P 27897030 Виробник : SEMIKRON DANFOSS SEMIX453GB17E4I50P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.7kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Pulsed collector current: 1.35kA
Collector current: 450A
Gate-emitter voltage: ±20V
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Topology: IGBT half-bridge; shunt resistor; thermistor
Case: SEMiX® 3p
товар відсутній