SEMIX453GB17E4DP 27895414 SEMIKRON DANFOSS
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Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.35kA
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMiX® 3p
кількість в упаковці: 1 шт
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Технічний опис SEMIX453GB17E4DP 27895414 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 1.35kA, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMiX® 3p, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX453GB17E4DP 27895414
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SEMIX453GB17E4DP 27895414 | Виробник : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 1.35kA Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; thermistor Case: SEMiX® 3p |
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