SEMIX302GB066HDS 27891120 SEMIKRON DANFOSS
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Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
кількість в упаковці: 1 шт
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Технічний опис SEMIX302GB066HDS 27891120 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMIX2S, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX302GB066HDS 27891120
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SEMIX302GB066HDS 27891120 | Виробник : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; thermistor Case: SEMIX2S Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
товар відсутній |