SEMIX151GB12VS 27890101 SEMIKRON DANFOSS
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Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Case: SEMIX1S
Topology: IGBT half-bridge; thermistor
Collector current: 150A
Pulsed collector current: 450A
кількість в упаковці: 1 шт
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Технічний опис SEMIX151GB12VS 27890101 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of module: IGBT, Application: for UPS; frequency changer; Inverter; photovoltaics, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Case: SEMIX1S, Topology: IGBT half-bridge; thermistor, Collector current: 150A, Pulsed collector current: 450A, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX151GB12VS 27890101
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SEMIX151GB12VS 27890101 | Виробник : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Application: for UPS; frequency changer; Inverter; photovoltaics Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Mechanical mounting: screw Case: SEMIX1S Topology: IGBT half-bridge; thermistor Collector current: 150A Pulsed collector current: 450A |
товар відсутній |