SE100PWD-M3/I Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 200V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6 µs
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
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Технічний опис SE100PWD-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.6 µs, Technology: Standard, Capacitance @ Vr, F: 78pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 200, Current - Reverse Leakage @ Vr: 20 µA @ 200 V.
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SE100PWD-M3/I | Виробник : Vishay General Semiconductor |
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