SCTH100N65G2-7AG STMicroelectronics
Виробник: STMicroelectronicsMOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ 95 A
на замовлення 1000 шт:
термін постачання 336-345 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2681.55 грн |
| 10+ | 2348.63 грн |
| 100+ | 1786.82 грн |
| 1000+ | 1593.07 грн |
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Технічний опис SCTH100N65G2-7AG STMicroelectronics
Description: SICFET N-CH 650V 95A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: H2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SCTH100N65G2-7AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 95A Automotive 8-Pin(7+Tab) H2PAK T/R |
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SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 95A Automotive 8-Pin(7+Tab) H2PAK T/R |
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| SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Description: SICFET N-CH 650V 95A H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: H2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Grade: Automotive Qualification: AEC-Q101 |
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SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Description: SICFET N-CH 650V 95A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: H2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| SCTH100N65G2-7AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товар відсутній |