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SCT4045DWATL

SCT4045DWATL Rohm Semiconductor

datasheet?p=SCT4045DWA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Виробник: Rohm Semiconductor
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+728.32 грн
10+ 601.09 грн
100+ 500.91 грн
500+ 414.78 грн
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Технічний опис SCT4045DWATL Rohm Semiconductor

Description: 750V, 31A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V, Vgs(th) (Max) @ Id: 4.8V @ 8.89mA, Supplier Device Package: TO-263-7LA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V.

Інші пропозиції SCT4045DWATL

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
SCT4045DWATL SCT4045DWATL Виробник : Rohm Semiconductor datasheet?p=SCT4045DWA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 750V, 31A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
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