SCT3022ALHRC11 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Qualification: AEC-Q101
на замовлення 2246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4922.96 грн |
| 30+ | 4148.25 грн |
| 120+ | 3851.94 грн |
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Технічний опис SCT3022ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V, Power Dissipation (Max): 339W, Vgs(th) (Max) @ Id: 5.6V @ 18.2mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V, Qualification: AEC-Q101.
Інші пропозиції SCT3022ALHRC11 за ціною від 3687.89 грн до 5269.32 грн
| Фото | Назва | Виробник | Інформація |
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SCT3022ALHRC11 | Виробник : ROHM Semiconductor |
MOSFET 650V 93A 339W SIC 22mOhm TO-247N |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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| SCT3022ALHRC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 133nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 232A Case: TO247 Drain-source voltage: 650V Drain current: 93A кількість в упаковці: 30 шт |
товар відсутній |
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| SCT3022ALHRC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 133nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 232A Case: TO247 Drain-source voltage: 650V Drain current: 93A |
товар відсутній |