Технічний опис SBS813-TL-E ON Semiconductor
Description: 30 V, 3.0 A LOW VF SCHOTTKY BARR, Packaging: Bulk, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 3A, Supplier Device Package: 8-VEC, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A, Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V.
Інші пропозиції SBS813-TL-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SBS813-TL-E | Виробник : Sanyo |
Description: 30 V, 3.0 A LOW VF SCHOTTKY BARR Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: 8-VEC Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V |
товар відсутній |