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SBLB10L25HE3_B/P Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
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Технічний опис SBLB10L25HE3_B/P Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 25 V, Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A, Current - Reverse Leakage @ Vr: 800 µA @ 25 V.
Інші пропозиції SBLB10L25HE3_B/P
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SBLB10L25HE3_B/P | Виробник : Vishay General Semiconductor |
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