Технічний опис S8CG-M3/I Vishay
Description: DIODE GEN PURP 400V 8A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Standard, Capacitance @ Vr, F: 79pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Інші пропозиції S8CG-M3/I
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
S8CG-M3/I | Виробник : Vishay |
![]() |
товар відсутній |
|
S8CG-M3/I | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Standard Capacitance @ Vr, F: 79pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товар відсутній |
||
![]() |
S8CG-M3/I | Виробник : Vishay General Semiconductor |
![]() |
товар відсутній |