Технічний опис S80KS5122GABHV023 Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA, Packaging: Tape & Reel (TR), Package / Case: 24-VBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 1.7V ~ 2V, Technology: PSRAM (Pseudo SRAM), Clock Frequency: 200 MHz, Memory Format: PSRAM, Supplier Device Package: 24-FBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 35ns, Memory Interface: HyperBus, Access Time: 35 ns, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції S80KS5122GABHV023
| Фото | Назва | Виробник | Інформація |
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| S80KS5122GABHV023 | Виробник : Infineon Technologies |
 PSRAM Sync Single Port 512M-bit 64M x 8 35ns 24-Pin FBGA T/R |
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S80KS5122GABHV023 | Виробник : Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA Packaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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S80KS5122GABHV023 | Виробник : Infineon Technologies |
DRAM HyperRAM |
товар відсутній |