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S5MS-E3/57T Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 1KV 1.6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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Технічний опис S5MS-E3/57T Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.6A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.6A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Інші пропозиції S5MS-E3/57T
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S5MS-E3/57T | Виробник : Vishay General Semiconductor |
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