S4PM-M3/86A Vishay General Semiconductor
на замовлення 1224 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.15 грн |
| 100+ | 18.2 грн |
| 500+ | 14.27 грн |
| 1000+ | 12.72 грн |
| 1500+ | 11.18 грн |
| 9000+ | 10.89 грн |
Відгуки про товар
Написати відгук
Технічний опис S4PM-M3/86A Vishay General Semiconductor
Description: DIODE GEN PURP 1KV 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Інші пропозиції S4PM-M3/86A за ціною від 13.94 грн до 33.45 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
S4PM-M3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1KV 4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 1275 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| S4PM-M3/86A | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 4A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 30pF Case: SMPC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.1mA Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
|
|
S4PM-M3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 4A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товар відсутній |
|||||||||||
| S4PM-M3/86A | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 4A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 30pF Case: SMPC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.1mA Kind of package: reel; tape |
товар відсутній |