S4PB-M3/86A Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 2840 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 32.81 грн |
11+ | 26.89 грн |
100+ | 18.66 грн |
500+ | 13.68 грн |
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Технічний опис S4PB-M3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Інші пропозиції S4PB-M3/86A за ціною від 10.93 грн до 35.96 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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S4PB-M3/86A | Виробник : Vishay General Semiconductor | Rectifiers 4.0 Amp 100 Volt |
на замовлення 1851 шт: термін постачання 21-30 дні (днів) |
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S4PB-M3/86A | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ir: 100uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 30pF Case: SMPC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.1mA Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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S4PB-M3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 4A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товар відсутній |
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S4PB-M3/86A | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ir: 100uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 30pF Case: SMPC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.1mA Kind of package: reel; tape |
товар відсутній |