S2M0080120D SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W
Mounting: THT
Case: TO247-3
Power dissipation: 231W
Technology: SiC
Kind of package: tube
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Pulsed drain current: 82A
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W
Mounting: THT
Case: TO247-3
Power dissipation: 231W
Technology: SiC
Kind of package: tube
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Pulsed drain current: 82A
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 994.03 грн |
2+ | 673.21 грн |
4+ | 636.23 грн |
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Технічний опис S2M0080120D SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V.
Інші пропозиції S2M0080120D за ціною від 763.48 грн до 1192.83 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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S2M0080120D | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W Mounting: THT Case: TO247-3 Power dissipation: 231W Technology: SiC Kind of package: tube Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: -10...25V Pulsed drain current: 82A Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 137mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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S2M0080120D | Виробник : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V |
на замовлення 276 шт: термін постачання 21-31 дні (днів) |
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