S29GL512S10DHSS63 Infineon Technologies
Виробник: Infineon Technologies512 MBIT, 3V, 100NS, 64 BALL FBGA, PAGE MODE SECURE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY
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Технічний опис S29GL512S10DHSS63 Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA, Packaging: Tape & Reel (TR), Package / Case: 64-LBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Memory Format: FLASH, Supplier Device Package: 64-FBGA (9x9), Part Status: Active, Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 32M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції S29GL512S10DHSS63
| Фото | Назва | Виробник | Інформація |
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S29GL512S10DHSS63 | Виробник : Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
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| S29GL512S10DHSS63 | Виробник : Cypress Semiconductor |
NOR Flash Nor |
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