Технічний опис S1AFM-M3/6B Vishay
Description: DIODE GEN PURP 1KV 1A DO221AC, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.47 µs, Technology: Standard, Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-221AC (SlimSMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Інші пропозиції S1AFM-M3/6B
Фото | Назва | Виробник | Інформація |
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S1AFM-M3/6B | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.47 µs Technology: Standard Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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S1AFM-M3/6B | Виробник : Vishay General Semiconductor |
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товар відсутній |