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RN2906,LXHF(CT Toshiba Semiconductor and Storage
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Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
13+ | 25.09 грн |
20+ | 14.94 грн |
100+ | 9.4 грн |
500+ | 6.56 грн |
1000+ | 5.82 грн |
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Технічний опис RN2906,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RN2906,LXHF(CT за ціною від 3.37 грн до 27.47 грн
Фото | Назва | Виробник | Інформація |
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RN2906,LXHF(CT | Виробник : Toshiba |
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на замовлення 8858 шт: термін постачання 21-30 дні (днів) |
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RN2906,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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