![RN2903FE(TE85L,F) RN2903FE(TE85L,F)](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4850/264_SOT-563.jpg)
RN2903FE(TE85L,F) Toshiba Semiconductor and Storage
![docget.jsp?did=19092&prodName=RN2906FE](/images/adobe-acrobat.png)
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
на замовлення 3450 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
13+ | 24.33 грн |
18+ | 16.4 грн |
100+ | 8.27 грн |
500+ | 6.33 грн |
1000+ | 4.69 грн |
2000+ | 3.95 грн |
Відгуки про товар
Написати відгук
Технічний опис RN2903FE(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: ES6, Part Status: Active.
Інші пропозиції RN2903FE(TE85L,F)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
RN2903FE(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Part Status: Active |
товар відсутній |
|
![]() |
RN2903FE(TE85L,F) | Виробник : Toshiba |
![]() |
товар відсутній |