RN1911FE,LXHF(CT Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.64 грн |
Відгуки про товар
Написати відгук
Технічний опис RN1911FE,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: ES6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RN1911FE,LXHF(CT за ціною від 3.87 грн до 27.47 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RN1911FE,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
RN1911FE,LXHF(CT | Виробник : Toshiba |
Digital Transistors AUTO AEC-Q NPN x 2 Q1BSR=10kO, Q2BSR=10kO, VCEO=50V, IC=0.1A (SOT-563) |
на замовлення 7980 шт: термін постачання 21-30 дні (днів) |
|