RMPG06D-E3/53 Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 200V 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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Технічний опис RMPG06D-E3/53 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MPG06, Packaging: Tape & Box (TB), Package / Case: MPG06, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: MPG06, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції RMPG06D-E3/53
Фото | Назва | Виробник | Інформація |
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RMPG06D-E3/53 | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: MPG06, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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RMPG06D-E3/53 | Виробник : Vishay General Semiconductor |
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