![RJL6012DPE-00#J3 RJL6012DPE-00#J3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/370/SC-83.jpg)
RJL6012DPE-00#J3 Renesas Electronics America Inc
![rjl6012dpe-datasheet](/images/adobe-acrobat.png)
Description: MOSFET N-CH 600V 10A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис RJL6012DPE-00#J3 Renesas Electronics America Inc
Description: MOSFET N-CH 600V 10A 4LDPAK, Packaging: Tube, Package / Case: SC-83, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V, Power Dissipation (Max): 100W (Tc), Supplier Device Package: LDPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Інші пропозиції RJL6012DPE-00#J3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
RJL6012DPE-00#J3 | Виробник : Renesas Electronics |
![]() |
товар відсутній |