RJH60D5DPK-00#T0

RJH60D5DPK-00#T0 Renesas Electronics Corporation


rjh60d5dpk-datasheet Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 75A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 400µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
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Технічний опис RJH60D5DPK-00#T0 Renesas Electronics Corporation

Description: IGBT TRENCH 600V 75A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A, Supplier Device Package: TO-3P, IGBT Type: Trench, Td (on/off) @ 25°C: 50ns/135ns, Switching Energy: 650µJ (on), 400µJ (off), Test Condition: 300V, 37A, 5Ohm, 15V, Gate Charge: 78 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 200 W.

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RJH60D5DPK-00#T0 Виробник : Renesas Electronics REN_r07ds0163ej0400_rjh60d5dpk_DST_20110309-1999166.pdf IGBT Transistors IGBT
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