RJH60D3DPP-M0#T2

RJH60D3DPP-M0#T2 Renesas Electronics Corporation


rjh60d3dpp-m0-datasheet Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 35A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/80ns
Switching Energy: 200µJ (on), 210µJ (off)
Test Condition: 300V, 17A, 5Ohm, 15V
Gate Charge: 37 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 40 W
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Технічний опис RJH60D3DPP-M0#T2 Renesas Electronics Corporation

Description: IGBT TRENCH 600V 35A TO220FL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A, Supplier Device Package: TO-220FL, IGBT Type: Trench, Td (on/off) @ 25°C: 35ns/80ns, Switching Energy: 200µJ (on), 210µJ (off), Test Condition: 300V, 17A, 5Ohm, 15V, Gate Charge: 37 nC, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 40 W.

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RJH60D3DPP-M0#T2 Виробник : Renesas Electronics REN_r07ds0162ej0400_rjh60d3dpp_DST_20110419-1999235.pdf IGBT Transistors IGBT
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