RHU003N03FRAT106 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.65 грн |
| 19+ | 15.65 грн |
| 100+ | 7.88 грн |
| 500+ | 6.04 грн |
| 1000+ | 4.48 грн |
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Технічний опис RHU003N03FRAT106 Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: UMT3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції RHU003N03FRAT106
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| RHU003N03FRAT106 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 2.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
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RHU003N03FRAT106 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 300MA UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V Qualification: AEC-Q101 |
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RHU003N03FRAT106 | Виробник : ROHM Semiconductor |
MOSFETs Nch 30V Vds 0.3A 1.4Rds(on) SOT-323 |
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| RHU003N03FRAT106 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 2.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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