RGSX5TS65EGC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 434 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 373.88 грн |
30+ | 202.32 грн |
120+ | 167.61 грн |
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Технічний опис RGSX5TS65EGC11 Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 116 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 43ns/113ns, Switching Energy: 3.44mJ (on), 1.9mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 79 nC, Current - Collector (Ic) (Max): 114 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 404 W.
Інші пропозиції RGSX5TS65EGC11 за ціною від 492.82 грн до 741.22 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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RGSX5TS65EGC11 | Виробник : ROHM |
Description: ROHM - RGSX5TS65EGC11 - IGBT, 114 A, 1.7 V, 404 W, 650 V, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V usEccn: EAR99 euEccn: NLR Verlustleistung: 404W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: Trench Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 114A SVHC: Lead (17-Jan-2023) |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65EGC11 | Виробник : ROHM Semiconductor | IGBT Transistors 8?s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Field Stop Trench IGBT |
товару немає в наявності |