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RBQ30NS65AFHTL Rohm Semiconductor
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Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.1 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 65 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
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1000+ | 43.61 грн |
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Технічний опис RBQ30NS65AFHTL Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 30A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 16.1 ns, Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: LPDS, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 65 V, Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A, Current - Reverse Leakage @ Vr: 450 µA @ 65 V, Qualification: AEC-Q101.
Інші пропозиції RBQ30NS65AFHTL за ціною від 35.99 грн до 106.6 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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RBQ30NS65AFHTL | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16.1 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A Current - Reverse Leakage @ Vr: 450 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS65AFHTL | Виробник : ROHM Semiconductor |
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на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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RBQ30NS65AFHTL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 65V; 15Ax2; D2PAK,SC83,TO263S Case: D2PAK; SC83; TO263S Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 65V Type of diode: Schottky rectifying Max. forward voltage: 0.69V Leakage current: 0.2mA Max. forward impulse current: 100A Load current: 15A x2 кількість в упаковці: 1 шт |
товар відсутній |
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RBQ30NS65AFHTL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 65V; 15Ax2; D2PAK,SC83,TO263S Case: D2PAK; SC83; TO263S Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 65V Type of diode: Schottky rectifying Max. forward voltage: 0.69V Leakage current: 0.2mA Max. forward impulse current: 100A Load current: 15A x2 |
товар відсутній |