![RBQ20NS65AFHTL RBQ20NS65AFHTL](https://www.mouser.com/images/rohmsemiconductor/lrg/SOT_457T_6_DSL.jpg)
RBQ20NS65AFHTL ROHM Semiconductor
на замовлення 2526 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 95.94 грн |
10+ | 77.43 грн |
100+ | 52.5 грн |
500+ | 44.49 грн |
1000+ | 33.03 грн |
2000+ | 32.54 грн |
5000+ | 32.19 грн |
Відгуки про товар
Написати відгук
Технічний опис RBQ20NS65AFHTL ROHM Semiconductor
Description: DIODE ARRAY SCHOTT 65V 20A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: LPDS, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 65 V, Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A, Current - Reverse Leakage @ Vr: 140 µA @ 65 V, Qualification: AEC-Q101.
Інші пропозиції RBQ20NS65AFHTL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
RBQ20NS65AFHTL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 65V; 10Ax2; D2PAK,SC83,TO263S Case: D2PAK; SC83; TO263S Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 65V Type of diode: Schottky rectifying Max. forward voltage: 0.69V Leakage current: 140µA Max. forward impulse current: 100A Load current: 10A x2 кількість в упаковці: 1 шт |
товар відсутній |
||
![]() |
RBQ20NS65AFHTL | Виробник : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A Current - Reverse Leakage @ Vr: 140 µA @ 65 V Qualification: AEC-Q101 |
товар відсутній |
|
![]() |
RBQ20NS65AFHTL | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A Current - Reverse Leakage @ Vr: 140 µA @ 65 V Qualification: AEC-Q101 |
товар відсутній |
|
RBQ20NS65AFHTL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 65V; 10Ax2; D2PAK,SC83,TO263S Case: D2PAK; SC83; TO263S Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 65V Type of diode: Schottky rectifying Max. forward voltage: 0.69V Leakage current: 140µA Max. forward impulse current: 100A Load current: 10A x2 |
товар відсутній |