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R6576ENZ4C13 Rohm Semiconductor
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Description: 650V 76A TO-247, LOW-NOISE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.96mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1320.07 грн |
30+ | 1028.55 грн |
120+ | 968.06 грн |
510+ | 823.32 грн |
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Технічний опис R6576ENZ4C13 Rohm Semiconductor
Description: 650V 76A TO-247, LOW-NOISE POWER, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.96mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.
Інші пропозиції R6576ENZ4C13 за ціною від 847.88 грн до 1433.59 грн
Фото | Назва | Виробник | Інформація |
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R6576ENZ4C13 | Виробник : ROHM Semiconductor |
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на замовлення 1036 шт: термін постачання 21-30 дні (днів) |
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R6576ENZ4C13 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 76A Pulsed drain current: 228A Power dissipation: 735W Case: TO247 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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R6576ENZ4C13 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 76A Pulsed drain current: 228A Power dissipation: 735W Case: TO247 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |