R6003JND4TL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 600V 1.3A SOT-223-3, PRESTOMOS W
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 7V @ 300µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
Description: 600V 1.3A SOT-223-3, PRESTOMOS W
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 7V @ 300µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 64.49 грн |
10+ | 54.63 грн |
25+ | 51.34 грн |
100+ | 39.33 грн |
250+ | 36.53 грн |
500+ | 31.09 грн |
1000+ | 24.47 грн |
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Технічний опис R6003JND4TL1 Rohm Semiconductor
Description: 600V 1.3A SOT-223-3, PRESTOMOS W, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V, Power Dissipation (Max): 7.8W (Tc), Vgs(th) (Max) @ Id: 7V @ 300µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V.
Інші пропозиції R6003JND4TL1 за ціною від 22.14 грн до 70.88 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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R6003JND4TL1 | Виробник : ROHM Semiconductor | MOSFETs 600V 1.3A SOT-223-3, PrestoMOS with integrated high-speed diode: R6003JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS series, R60xxJNx series increases design flexibility while mainta |
на замовлення 3500 шт: термін постачання 21-30 дні (днів) |
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R6003JND4TL1 | Виробник : Rohm Semiconductor |
Description: 600V 1.3A SOT-223-3, PRESTOMOS W Packaging: Tape & Reel (TR) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V Power Dissipation (Max): 7.8W (Tc) Vgs(th) (Max) @ Id: 7V @ 300µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V |
товару немає в наявності |