Технічний опис PT5529B/L2-F Everlight Electronics
Description: SENSOR PHOTO 940NM SIDE VIEW RAD, Packaging: Bulk, Package / Case: Radial - 3 Leads, Wavelength: 940nm, Mounting Type: Through Hole, Orientation: Side View, Operating Temperature: -40°C ~ 85°C (TA), Current - Dark (Id) (Max): 100 nA, Current - Collector (Ic) (Max): 20 mA, Voltage - Collector Emitter Breakdown (Max): 30 V.
Інші пропозиції PT5529B/L2-F
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PT5529B/L2-F | Виробник : Everlight Electronics CO., LTD | Phototransistor IR Chip Silicon 940nm 3-Pin Bag |
товар відсутній |
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PT5529B/L2-F | Виробник : EVERLIGHT |
Category: Phototransistors Description: Phototransistor; Dim: 2.8x4.8x4.5mm; λp max: 940nm; 30V Mounting: THT Type of photoelement: phototransistor Collector-emitter voltage: 30V Wavelength of peak sensitivity: 940nm Dark current: 0.1µA Dimensions: 2.8x4.8x4.5mm LED lens: black Front: flat кількість в упаковці: 5 шт |
товар відсутній |
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PT5529B/L2-F | Виробник : Everlight Electronics Co Ltd |
Description: SENSOR PHOTO 940NM SIDE VIEW RAD Packaging: Bulk Package / Case: Radial - 3 Leads Wavelength: 940nm Mounting Type: Through Hole Orientation: Side View Operating Temperature: -40°C ~ 85°C (TA) Current - Dark (Id) (Max): 100 nA Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
товар відсутній |
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PT5529B/L2-F | Виробник : Everlight | Phototransistors IR Phototransistor |
товар відсутній |
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PT5529B/L2-F | Виробник : EVERLIGHT |
Category: Phototransistors Description: Phototransistor; Dim: 2.8x4.8x4.5mm; λp max: 940nm; 30V Mounting: THT Type of photoelement: phototransistor Collector-emitter voltage: 30V Wavelength of peak sensitivity: 940nm Dark current: 0.1µA Dimensions: 2.8x4.8x4.5mm LED lens: black Front: flat |
товар відсутній |