на замовлення 4071 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.53 грн |
| 10+ | 38.14 грн |
| 100+ | 24.61 грн |
| 500+ | 19.26 грн |
| 1000+ | 15.09 грн |
| 1500+ | 13.35 грн |
| 9000+ | 11.12 грн |
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Технічний опис PSMN9R8-30MLC,115 Nexperia
Description: MOSFET N-CH 30V 50A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V.
Інші пропозиції PSMN9R8-30MLC,115 за ціною від 19.68 грн до 47.38 грн
| Фото | Назва | Виробник | Інформація |
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PSMN9R8-30MLC,115 | Виробник : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 50A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V |
на замовлення 1434 шт: термін постачання 21-31 дні (днів) |
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PSMN9R8-30MLC,115 | Виробник : NEXPERIA |
Trans MOSFET N-CH 30V 50A 8-Pin LFPAK EP T/R |
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| PSMN9R8-30MLC,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 202A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 10.65mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN9R8-30MLC,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 50A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V |
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| PSMN9R8-30MLC,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 202A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 10.65mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |