Технічний опис PSMN9R5-100XS,127 NXP Semiconductors
Description: MOSFET N-CH 100V 44.2A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44.2A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 10A, 10V, Power Dissipation (Max): 52.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220F, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 81.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V.
Інші пропозиції PSMN9R5-100XS,127
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PSMN9R5-100XS,127 | Виробник : NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44.2A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 10A, 10V Power Dissipation (Max): 52.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V |
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