PSMN1R8-80SSFJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 476.45 грн |
| 10+ | 393.76 грн |
| 100+ | 328.12 грн |
| 500+ | 271.7 грн |
| 1000+ | 244.53 грн |
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Технічний опис PSMN1R8-80SSFJ Nexperia USA Inc.
Description: NEXTPOWER 80/100V MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V, Power Dissipation (Max): 341W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V.
Інші пропозиції PSMN1R8-80SSFJ за ціною від 227.89 грн до 483.77 грн
| Фото | Назва | Виробник | Інформація |
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PSMN1R8-80SSFJ | Виробник : Nexperia |
MOSFET MOS DISCRETES |
на замовлення 1803 шт: термін постачання 21-30 дні (днів) |
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| PSMN1R8-80SSFJ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 205A Pulsed drain current: 1158A Power dissipation: 341W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 222nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN1R8-80SSFJ | Виробник : Nexperia USA Inc. |
Description: NEXTPOWER 80/100V MOSFETS Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V |
товар відсутній |
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| PSMN1R8-80SSFJ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 205A Pulsed drain current: 1158A Power dissipation: 341W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 222nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |