PSMN1R6-25YLEX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PSMN1R6-25YLE/SOT669/LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V
Description: PSMN1R6-25YLE/SOT669/LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 115.34 грн |
10+ | 92.12 грн |
100+ | 73.28 грн |
500+ | 58.19 грн |
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Технічний опис PSMN1R6-25YLEX Nexperia USA Inc.
Description: PSMN1R6-25YLE/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 185A (Tc), Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V, Power Dissipation (Max): 124W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V.
Інші пропозиції PSMN1R6-25YLEX за ціною від 48.64 грн до 122.77 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PSMN1R6-25YLEX | Виробник : Nexperia | MOSFET PSMN1R6-25YLE/SOT669/LFPAK |
на замовлення 1692 шт: термін постачання 21-30 дні (днів) |
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PSMN1R6-25YLEX | Виробник : Nexperia USA Inc. |
Description: PSMN1R6-25YLE/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 25A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3698 pF @ 12 V |
товар відсутній |