PSMN1R5-40PS,127 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
на замовлення 4610 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 291.09 грн |
10+ | 235.24 грн |
100+ | 190.29 грн |
500+ | 158.74 грн |
1000+ | 135.92 грн |
2000+ | 127.98 грн |
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Технічний опис PSMN1R5-40PS,127 Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V.
Інші пропозиції PSMN1R5-40PS,127 за ціною від 133.47 грн до 319.81 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PSMN1R5-40PS,127 | Виробник : Nexperia | MOSFET PSMN1R5-40PS/SOT78/SIL3P |
на замовлення 4840 шт: термін постачання 21-30 дні (днів) |
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PSMN1R5-40PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1301A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1301A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN1R5-40PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1301A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1301A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |