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PMXB360ENEAZ NEXPERIA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 5.98 грн |
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Технічний опис PMXB360ENEAZ NEXPERIA
Description: MOSFET N-CH 80V 1.1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V, Power Dissipation (Max): 400mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMXB360ENEAZ за ціною від 5.51 грн до 27.24 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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PMXB360ENEAZ | Виробник : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V Power Dissipation (Max): 400mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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PMXB360ENEAZ | Виробник : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V Power Dissipation (Max): 400mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13647 шт: термін постачання 21-31 дні (днів) |
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PMXB360ENEAZ | Виробник : Nexperia |
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на замовлення 20257 шт: термін постачання 21-30 дні (днів) |
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PMXB360ENEAZ | Виробник : NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A Polarisation: unipolar Drain-source voltage: 80V Drain current: 0.7A On-state resistance: 887mΩ Type of transistor: N-MOSFET Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4.5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4.4A Mounting: SMD Case: DFN1010D-3; SOT1215 кількість в упаковці: 5000 шт |
товар відсутній |
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PMXB360ENEAZ | Виробник : NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A Polarisation: unipolar Drain-source voltage: 80V Drain current: 0.7A On-state resistance: 887mΩ Type of transistor: N-MOSFET Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4.5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4.4A Mounting: SMD Case: DFN1010D-3; SOT1215 |
товар відсутній |