Технічний опис PMV65UNEAR NEXPERIA
Description: MOSFET N-CH 20V 2.8A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 940mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMV65UNEAR
| Фото | Назва | Виробник | Інформація |
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PMV65UNEAR | Виробник : Nexperia |
 Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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PMV65UNEAR | Виробник : Nexperia |
Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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PMV65UNEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.8A; Idm: 11A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.8A Pulsed drain current: 11A Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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PMV65UNEAR | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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PMV65UNEAR | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.8A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V Qualification: AEC-Q101 |
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PMV65UNEAR | Виробник : Nexperia |
MOSFET PMV65UNEA/SOT23/TO-236AB |
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PMV65UNEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.8A; Idm: 11A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.8A Pulsed drain current: 11A Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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