PMPB29XPEAX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 908 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 31.59 грн |
12+ | 25.49 грн |
100+ | 17.7 грн |
500+ | 12.97 грн |
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Технічний опис PMPB29XPEAX Nexperia USA Inc.
Description: MOSFET P-CH 20V 5A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMPB29XPEAX за ціною від 8.55 грн до 33.98 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PMPB29XPEAX | Виробник : Nexperia | MOSFET PMPB29XPEA/SOT1220/SOT1220 |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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PMPB29XPEAX | Виробник : NEXPERIA |
Description: NEXPERIA - PMPB29XPEAX - Leistungs-MOSFET, p-Kanal, 20 V, 5 A, 0.028 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 12.5W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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PMPB29XPEAX | Виробник : NEXPERIA |
Description: NEXPERIA - PMPB29XPEAX - Leistungs-MOSFET, p-Kanal, 20 V, 5 A, 0.028 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 12.5W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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PMPB29XPEAX | Виробник : NEXPERIA | Trans MOSFET P-CH 20V 5A Automotive 6-Pin DFN-MD EP T/R |
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PMPB29XPEAX | Виробник : NEXPERIA | PMPB29XPEAX SMD P channel transistors |
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PMPB29XPEAX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |