на замовлення 2649 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
11+ | 30.17 грн |
13+ | 24.94 грн |
100+ | 15.99 грн |
500+ | 12.51 грн |
1000+ | 10.57 грн |
3000+ | 9.52 грн |
9000+ | 8.83 грн |
Відгуки про товар
Написати відгук
Технічний опис PMPB15XPAX Nexperia
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMPB15XPAX за ціною від 10.93 грн до 31.59 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMPB15XPAX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2899 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
PMPB15XPAX | Виробник : NEXPERIA |
Description: NEXPERIA - PMPB15XPAX - Leistungs-MOSFET, p-Kanal, 12 V, 8.2 A, 0.015 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 8.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 12.5W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
PMPB15XPAX | Виробник : NEXPERIA |
Description: NEXPERIA - PMPB15XPAX - Leistungs-MOSFET, p-Kanal, 12 V, 8.2 A, 0.015 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 8.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 12.5W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
PMPB15XPAX | Виробник : NEXPERIA | Trans MOSFET P-CH 12V 8.2A Automotive 6-Pin DFN-MD EP T/R |
товар відсутній |
||||||||||||||
PMPB15XPAX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||
PMPB15XPAX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||||||||||||||
PMPB15XPAX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |