PMPB07R3ENX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.1 грн |
| 10+ | 29.62 грн |
| 100+ | 20.6 грн |
| 500+ | 15.09 грн |
| 1000+ | 12.27 грн |
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Технічний опис PMPB07R3ENX Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: DFN2020M-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V.
Інші пропозиції PMPB07R3ENX за ціною від 10.15 грн до 39.99 грн
| Фото | Назва | Виробник | Інформація |
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PMPB07R3ENX | Виробник : Nexperia |
 MOSFET PMPB07R3EN/SOT1220-2/DFN2020M- |
на замовлення 4542 шт: термін постачання 21-30 дні (днів) |
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PMPB07R3ENX | Виробник : Nexperia USA Inc. |
Description: PMPB07R3EN/SOT1220-2/DFN2020M- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DFN2020M-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V |
товар відсутній |