Технічний опис PMN50XP,165 NXP Semiconductors
Description: MOSFET P-CH 20V 4.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 2.2W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SC-74, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V.
Інші пропозиції PMN50XP,165
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PMN50XP,165 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.8A, 4.5V Power Dissipation (Max): 2.2W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SC-74 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V |
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PMN50XP,165 | Виробник : Nexperia |
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