Технічний опис PMN38EN,165 NXP Semiconductors
Description: MOSFET N-CH 30V 5.4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 10V, Power Dissipation (Max): 1.75W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SC-74, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 25 V.
Інші пропозиції PMN38EN,165
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PMN38EN,165 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 10V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SC-74 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 25 V |
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