PMN30XPEX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 560mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
Description: MOSFET P-CH 20V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 560mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 34.16 грн |
12+ | 25.79 грн |
100+ | 15.47 грн |
500+ | 13.44 грн |
1000+ | 9.14 грн |
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Технічний опис PMN30XPEX Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.3A, 4.5V, Power Dissipation (Max): 560mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V.
Інші пропозиції PMN30XPEX за ціною від 7.61 грн до 38.93 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PMN30XPEX | Виробник : Nexperia | MOSFET PMN30XPE/SOT457/SC-74 |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
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PMN30XPEX | Виробник : Nexperia | 20 V, P-channel Trench MOSFET |
товар відсутній |
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PMN30XPEX | Виробник : NEXPERIA | 20 V, P-channel Trench MOSFET |
товар відсутній |
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PMN30XPEX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
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PMN30XPEX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.3A, 4.5V Power Dissipation (Max): 560mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V |
товар відсутній |
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PMN30XPEX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
товар відсутній |