Технічний опис PMN120ENEX Nexperia
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A, Case: SC74; SOT457; TSOP6, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 7.4nC, Technology: Trench, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 10A, Drain-source voltage: 60V, Drain current: 1.5A, On-state resistance: 246mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 3000 шт.
Інші пропозиції PMN120ENEX
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PMN120ENEX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 246mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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PMN120ENEX | Виробник : Nexperia USA Inc. | Description: PMN120ENE - 60V, N-CHANNEL TRENC |
товар відсутній |
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PMN120ENEX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.4nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 246mΩ Type of transistor: N-MOSFET |
товар відсутній |